Hi Everyone,

My present work deals with a study on the Metal-Semiconductor-Metal
Photodetectors and i am interested to know if there has been any work
done to make such a device at SWIR(1-3um), MWIR (3-6) and LWIR (6-15).
Till now my search has only given me devices at Near Infra red or
around 1.33um and 1.55um ..and in the ultra violet region with the use
of various kinds of materials like InGaAs, GaN and so on.

Now my interest is there any material which can be used as substrate
for the MSM PD's in the above mentioned region. I thought HgCdTe could
solve my problem but the only paper with this material discusses in
the 1.33 and 1.55um range . But i guess people are more interested
with InGaAs in this region .

So can some tell me why HgCdTe is not a preferred material for MSM
PD's . If i am wrong can u please provide me with any previous works
on this. Also if u think of any other material which can be used in
the SWIR., MWIR, LWIR region,please let me know .

Looking forward for your help
Ted

On 31 Aug 2004 15:14:44 -0700, (Ted) wrote:

Hi Everyone,

My present work deals with a study on the Metal-Semiconductor-Metal
Photodetectors and i am interested to know if there has been any work
done to make such a device at SWIR(1-3um), MWIR (3-6) and LWIR (6-15).
Till now my search has only given me devices at Near Infra red or
around 1.33um and 1.55um ..and in the ultra violet region with the use
of various kinds of materials like InGaAs, GaN and so on.

Now my interest is there any material which can be used as substrate
for the MSM PD's in the above mentioned region. I thought HgCdTe could
solve my problem but the only paper with this material discusses in
the 1.33 and 1.55um range . But i guess people are more interested
with InGaAs in this region .

So can some tell me why HgCdTe is not a preferred material for MSM
PD's . If i am wrong can u please provide me with any previous works
on this. Also if u think of any other material which can be used in
the SWIR., MWIR, LWIR region,please let me know .

Looking forward for your help

Not on sci.op-research...

A.L.

Ted wrote:

Hi Everyone,

My present work deals with a study on the Metal-Semiconductor-Metal
Photodetectors and i am interested to know if there has been any work
done to make such a device at SWIR(1-3um), MWIR (3-6) and LWIR (6-15).
Till now my search has only given me devices at Near Infra red or
around 1.33um and 1.55um ..and in the ultra violet region with the use
of various kinds of materials like InGaAs, GaN and so on.

Now my interest is there any material which can be used as substrate
for the MSM PD's in the above mentioned region. I thought HgCdTe could
solve my problem but the only paper with this material discusses in
the 1.33 and 1.55um range . But i guess people are more interested
with InGaAs in this region .

So can some tell me why HgCdTe is not a preferred material for MSM
PD's . If i am wrong can u please provide me with any previous works
on this. Also if u think of any other material which can be used in
the SWIR., MWIR, LWIR region,please let me know .

Looking forward for your help
Ted

Not-uncommon misconception: the 'op' in 'sci.op-research' is
'operations', not 'optics'.

-- Paul

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432-1111
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http://www.msu.edu/~rubin/
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Mathematicians are like Frenchmen: whenever you say something to them,
they translate it into their own language, and at once it is something
entirely different. J. W. v. GOETHE